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| DB3 / DB4 Features The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts. These diacs are intended for use in thyristors phase control, circuits for lamp dimming, universal motor speed control, and heat control DEC's DB3/DB4 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's SIGNAL BIDIRECTIONAL DIAC DO-35(GLASS) 0.075(1.9) MAX. DIA. 0.102(2.6) 0.091(2.3) DIA. R-1 1.083(27.5) MIN. 0.787(20.0) MIN. 0.154(3.9) MAX. 0.126(3.2) 0.106(2.7) 0.020(0.52) MAX. DIA. 1.083(27.5) MIN. 0.025(0.65) 0.021(0.55) DIA. 0.787(20.0) MIN. Dimensions in inches and (millimeters) Absolute Ratings (Limiting Values) Symbols Pc ITRM TSTG/TJ Parameters Power Dissipation on Printed Circuit(L=10mm) Repetitive Peak on-state Current Value DB3 TA=50E tp=10i s F=100Hz 2.0 150 2.0 DB4 Units mW A E Storage and Operating Junction Temperature -40 to +125/-40 to 110 Electrical characteristics Symbols VBO |+VBO|| - VBO| Parameters Breakover Voltage (Note 2) Breakover Voltage Symmetry Dynamic Breakover Voltage (Note 1) Output Voltage (Note 1) Breakover Current (Note 1) Rise Time (Note 1) Leakage Current (Note 1) Test Conditions C=22nF(Note2) See diagram 1 C=22nF(Note2) See diagram 1 a I=(IBO to IF=10mA) See diagram 1 See diagram 2 C=22nF(Note2) See diagram 3 VB=0.5 VBO max see diagram 1 Min Typ Max Max Min Min Max Typ Max Value DB3 28 32 36 3/43 5 5 100 1.5 10 DB4 35 40 45 Units V V V V i A i S i A |3/4a V| VO IBO tr IB Notes: (1) Electrical characteristics applicable in both forward and reverse directions (2) Connected in parallel with the devices RATINGS AND CHARACTERISTIC CURVES DB3/DB4 DIAGRAM 1 : Current-voltage characteristics +IF 10mA 220V 50Hz DIAGRAM 2 : Test circuit for output voltage 10KW 500KW 0.1mF D.U.T Vo R=20W IBO IB -V 0.5 VBO a V VBO +V DIAGRAM 3 : Test circuit see diagram2 adjust R for Ip=0.5A 90% Ip -IF 10% tr FIG.1-Power dissipation versus ambient temperature (maximum values) P (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 FIG.2-Relative variation of VBO versus junction temperature (typical values) VBO(TJ) VBO(TJ=25E ) 1.08 1.06 1.04 Tamb( E ) 1.02 TJ (E ) FIG.3-Peak pulse current versus pulse duration (maximum values) ITRM(A) 2 1 1.00 25 50 75 100 125 F=100Hz TJ initial=25E 0.1 tp(mS) 0.01 10 100 1000 10000 |
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